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Effects of Thermal Annealing on the Formation of Buriedβ-SiC by Ion Implantation
P. R. Poudel, B. Rout, D. R. Diercks, J. A. Paramo, Y. M. Strzhemechny, F. D. McdanielVolume:
40
Language:
english
Pages:
6
DOI:
10.1007/s11664-011-1695-9
Date:
September, 2011
File:
PDF, 537 KB
english, 2011