Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O
R. Niebuhr, K. H. Bachem, U. Kaufmann, M. Maier, C. Merz, B. Santic, P. Schlotter, H. JürgensenVolume:
26
Year:
1997
Language:
english
Pages:
4
DOI:
10.1007/s11664-997-0007-x
File:
PDF, 107 KB
english, 1997