Methods of defect-engineering shallow junctions formed by...

Journal of Electronic Materials 1997 Vol. 26; Iss. 11

Methods of defect-engineering shallow junctions formed by B+-implantation in Si

E. G. Roth, O. W. Holland, V. C. Venezia, Bent Nielsen
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Volume:
26
Year:
1997
Language:
english
Pages:
6
DOI:
10.1007/s11664-997-0083-y
File:
PDF, 162 KB
english, 1997
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