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Residual damage effects on gate contacts formed on SiC surfaces etched by using the amorphization technique
Dev Alok, K. Makeshwar, B. Jayant BaligaVolume:
26
Language:
english
Pages:
5
DOI:
10.1007/s11664-997-0134-4
Date:
March, 1997
File:
PDF, 499 KB
english, 1997