Growth of GaBN ternary solutions by organometallic vapor...

Journal of Electronic Materials 1997 / 03 Vol. 26; Iss. 3

Growth of GaBN ternary solutions by organometallic vapor phase epitaxy

A. Y. Polyakov, M. Shin, M. Skowronski, D. W. Greve, R. G. Wilson, A. V. Govorkov, R. M. Desrosiers
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Volume:
26
Language:
english
Pages:
6
DOI:
10.1007/s11664-997-0157-x
Date:
March, 1997
File:
PDF, 566 KB
english, 1997
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