Synchrotron x-ray irradiation effects on the device characteristics and the resistance to hot-carrier damage of MOSFETs with 4 nm thick gate oxides
Yuusuke Tanaka, Akira Tanabe, Katsumi Suzuki, Tsutomu Miyatake, Masaki HiroseVolume:
27
Year:
1998
Language:
english
Pages:
5
DOI:
10.1007/s11664-998-0124-1
File:
PDF, 176 KB
english, 1998