A new LPE growth method of semiconductor heterostructures...

Journal of Electronic Materials 1998 Vol. 27; Iss. 8

A new LPE growth method of semiconductor heterostructures with thickness profile variation of epitaxial layers

V. A. Mishurnyi, F. De Anda, A. Yu. Gorbatchev, I. C. Hernández, Del Castillo, J. Nieto-Navarro
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
27
Year:
1998
Language:
english
Pages:
2
DOI:
10.1007/s11664-998-0134-z
File:
PDF, 126 KB
english, 1998
Conversion to is in progress
Conversion to is failed