ECR plasma etch fabrication of C-doped base InGaAs/InP DHBT...

ECR plasma etch fabrication of C-doped base InGaAs/InP DHBT structures: A comparison of CH4/H2/Ar vs BCl3/N2plasma etch chemistries

R. F. Kopf, R. A. Hamm, R. J. Malik, R. W. Ryan, M. Geva, J. Burm, A. Tate
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Volume:
27
Year:
1990
Language:
english
Pages:
4
DOI:
10.1007/s11664-998-0190-4
File:
PDF, 227 KB
english, 1990
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