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GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers
A. E. Nikolaev, S. V. Rendakova, I. P. Nikitina, K. V. Vassilevski, V. A. DmitrievVolume:
27
Year:
1998
Language:
english
Pages:
4
DOI:
10.1007/s11664-998-0401-z
File:
PDF, 500 KB
english, 1998