MOVPE growth of HgCdTe for high performance 3–5 µm...

MOVPE growth of HgCdTe for high performance 3–5 µm photodiodes operating at 100–180K

P. Mitra, F. C. Case, M. B. Reine, T. Parodos, S. P. Tobin, P. W. Norton
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Volume:
28
Year:
1999
Language:
english
Pages:
7
DOI:
10.1007/s11664-999-0040-z
File:
PDF, 304 KB
english, 1999
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