The Impact of AlxGa1−xN Back Barrier in AlGaN/GaN High...

Coatings 2020 / 06 Vol. 10; Iss. 6

The Impact of AlxGa1−xN Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Six-Inch MCZ Si Substrate

Wang, H.Y., Chiu, H.C., Hsu, W.C., Liu, C.M., Chuang, C.Y., Liu, J.Z., Huang, Y.L.
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Volume:
10
Journal:
Coatings
DOI:
10.3390/coatings10060570
Date:
June, 2020
File:
PDF, 2.79 MB
2020
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