Design and analysis of high electron mobility transistor...

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Semiconductor Science and Technology 2020 / 06

Design and analysis of high electron mobility transistor (HEMT) inspired III-V electro-optic modulator topologies

Das, Pallabi, Tallur, Siddharth, Wu, Tian-Li
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Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/ab9ea9
Date:
June, 2020
File:
PDF, 3.98 MB
2020
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