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[IEEE 2020 IEEE International Reliability Physics Symposium (IRPS) - Dallas, TX, USA (2020.4.28-2020.5.30)] 2020 IEEE International Reliability Physics Symposium (IRPS) - Trap Dynamics Model Explaining the R ON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs
Zagni, Nicolo, Chini, Alessandro, Puglisi, Francesco Maria, Pavan, Paolo, Meneghini, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico, Verzellesi, GiovanniYear:
2020
DOI:
10.1109/IRPS45951.2020.9128816
File:
PDF, 915 KB
2020