Interface mechanisms involved in a-IGZO based dual gate...

Materials Science in Semiconductor Processing 2020 / 11 Vol. 119

Interface mechanisms involved in a-IGZO based dual gate ISFET pH sensor using Al2O3 as the top gate dielectric

Kumar, Narendra, Bhatt, Deepa, Sutradhar, Moitri, Panda, Siddhartha
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Volume:
119
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2020.105239
Date:
November, 2020
File:
PDF, 1.54 MB
2020
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