Gate leakage current reduction and improved reliability...

Gate leakage current reduction and improved reliability with an ultra-thin Ti layer for low-power applications

Park, Jungmin, Choi, Pyungho, Kim, Soonkon, Kang, Heesung, Ku, Jahum, Choi, Byoungdeog
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Volume:
708
Journal:
Thin Solid Films
DOI:
10.1016/j.tsf.2020.138102
Date:
August, 2020
File:
PDF, 1.32 MB
2020
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