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High Threshold Voltage Normally off Ultra-Thin-Barrier GaN MISHEMT with MOCVD-Regrown Ohmics and Si-Rich LPCVD-SiNx Gate Insulator
Wang, Hsiang-Chun, Chiu, Hsien-Chin, Huang, Chong-Rong, Kao, Hsuan-Ling, Chien, Feng-TsoVolume:
13
Journal:
Energies
DOI:
10.3390/en13102479
Date:
May, 2020
File:
PDF, 2.36 MB
2020