A study of the relationship between endurance and retention...

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IEEE Transactions on Device and Materials Reliability 2020

A study of the relationship between endurance and retention reliability for a HfOx-based resistive switching memory

Chung, Wei-Min, Chang, Yao-Feng, Hsu, Yu-Lin, Chen, Y.-C. Daphne, Lin, Chao-Cheng, Lin, Chang-Hsieh, Leu, Jihperng
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Year:
2020
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/TDMR.2020.3007172
File:
PDF, 1.03 MB
2020
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