Demonstration of Wide Bandgap AlGaN/GaN...

Advanced Electronic Materials 2020 / 07

Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates

Chandrasekar, Hareesh, Razzak, Towhidur, Wang, Caiyu, Reyes, Zeltzin, Majumdar, Kausik, Rajan, Siddharth
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Journal:
Advanced Electronic Materials
DOI:
10.1002/aelm.202000074
Date:
July, 2020
File:
PDF, 1.23 MB
2020
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