Publisher Correction: Ambipolar device simulation based on the drift-diffusion model in ion-gated transition metal dichalcogenide transistors
Ueda, Akiko, Zhang, Yijin, Sano, Nobuyuki, Imamura, Hiroshi, Iwasa, YoshihiroVolume:
6
Journal:
npj Computational Materials
DOI:
10.1038/s41524-020-0314-9
Date:
December, 2020
File:
PDF, 394 KB
2020