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[IEEE 2020 IEEE International Reliability Physics Symposium (IRPS) - Dallas, TX, USA (2020.4.28-2020.5.30)] 2020 IEEE International Reliability Physics Symposium (IRPS) - Modeling of Charge Failure Mechanisms during the Short Term Retention Depending on Program/Erase Cycle Counts in 3-D NAND Flash Memories
Woo, Changbeom, Kim, Shinkeun, Park, Jaeyeol, Shin, Hyungcheol, Kim, Haesoo, Choi, Gil-Bok, Seo, Moon-Sik, Noh, Keum HwanYear:
2020
DOI:
10.1109/IRPS45951.2020.9129306
File:
PDF, 386 KB
2020