Electrothermal analysis of novel N-P-P FinFET with...

Applied Physics 2020 / 8 Vol. 126; Iss. 8

Electrothermal analysis of novel N-P-P FinFET with electrically doped drain: a dual material gate device for reliable nanoscale applications

Karimi, Fa., Ramezani, Zeinab, Amiri, I. S., Mahdavi Nejad, Alireza
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
126
Journal:
Applied Physics A
DOI:
10.1007/s00339-020-03765-2
Date:
August, 2020
File:
PDF, 1.51 MB
2020
Conversion to is in progress
Conversion to is failed