Dielectric/Semiconductor Interfacial p‐Doping: A New...

  • Main
  • 2020 / 07
  • Dielectric/Semiconductor Interfacial p‐Doping: A New...
physica status solidi (RRL) - Rapid Research Letters 2020 / 07

Dielectric/Semiconductor Interfacial p‐Doping: A New Technique to Fabricate Solution Processed High Performance 1 V Ambipolar Oxide‐Transistor

Chourasia, Nitesh K., Sharma, Anand, Pal, Nila, Biring, Sajal, Pal, Bhola N.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Journal:
physica status solidi (RRL) – Rapid Research Letters
DOI:
10.1002/pssr.202000268
Date:
July, 2020
File:
PDF, 932 KB
2020
Conversion to is in progress
Conversion to is failed