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Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy
Hiramatsu, Kazumasa, Detchprohm, Theeradetch, Akasaki, IsamuVolume:
32
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.32.4042a
Date:
September, 1993
File:
PDF, 106 KB
1993