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[IEEE 2020 IEEE International Reliability Physics Symposium (IRPS) - Dallas, TX, USA (2020.4.28-2020.5.30)] 2020 IEEE International Reliability Physics Symposium (IRPS) - The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation
Vandemaele, Michiel, Chuang, Kai-Hsin, Bury, Erik, Tyaginov, Stanislav, Groeseneken, Guido, Kaczer, BenYear:
2020
DOI:
10.1109/IRPS45951.2020.9128218
File:
PDF, 1.55 MB
2020