[IEEE 2019 3rd International Conference on Electronic Information Technology and Computer Engineering (EITCE) - Xiamen, China (2019.10.18-2019.10.20)] 2019 3rd International Conference on Electronic Information Technology and Computer Engineering (EITCE) - Degradation Characteristics of Enhancement-Mode Gallium Nitride Cascoded FETs under different DC voltages
Hu, Dongqing, Luo, Xiaokang, Zhou, XintianYear:
2019
DOI:
10.1109/eitce47263.2019.9094792
File:
PDF, 2.53 MB
2019