Boron Nitride as a Passivation Capping Layer for AlGaN/GaN...

Journal of Nanoscience and Nanotechnology 2020 / 07 Vol. 20; Iss. 7

Boron Nitride as a Passivation Capping Layer for AlGaN/GaN High Electron Mobility Transistors

Lee, Gun Hee, Park, Ah Hyun, Lim, Jin Hong, Lee, Chil-Hyoung, Jeon, Dae-Woo, Kim, Young-Baek, Lee, Jongho, Yang, Jeon Wook, Suh, Eun-Kyung, Seo, Tae Hoon
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Volume:
20
Journal:
Journal of Nanoscience and Nanotechnology
DOI:
10.1166/jnn.2020.17587
Date:
July, 2020
File:
PDF, 5.28 MB
2020
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