Non-Volatile Field-Effect Transistors Enabled by Oxygen...

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IEEE Transactions on Electron Devices 2020

Non-Volatile Field-Effect Transistors Enabled by Oxygen Vacancy-Related Dipoles for Memory and Synapse Applications

Peng, Yue, Xiao, Wenwu, Liu, Fenning, Liu, Yan, Han, Genquan, Yang, Nan, Zhong, Ni, Duan, Chungang, Liu, Chen, Zhou, Yichun, Feng, Ze, Dong, Hong, Hao, Yue
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Year:
2020
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2020.3007563
File:
PDF, 1.92 MB
2020
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