Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-gate...

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IEEE Access 2020

Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-gate Process for Improved Radio-Frequency Performance

Cho, Min Su, Seo, Jae Hwa, Lee, Sang Ho, Jang, Hwan Soo, Kang, In Man
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Year:
2020
Journal:
IEEE Access
DOI:
10.1109/ACCESS.2020.3011103
File:
PDF, 591 KB
2020
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