Analysis of Surface Charge Effects and Edge Fringing...

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IEEE Transactions on Electron Devices 2020

Analysis of Surface Charge Effects and Edge Fringing Capacitance in Planar GaAs and GaN Schottky Barrier Diodes

Orfao, B., Vasallo, B. G., Moro-Melgar, D., Perez, S., Mateos, J., Gonzalez, T.
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Year:
2020
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2020.3007374
File:
PDF, 3.13 MB
2020
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