Improvising the Switching Ratio through Low-k / High-k Spacer and Dielectric Gate Stack in 3D FinFET - a Simulation Perspective
Samal, Asharani, Pradhan, Kumar Prasannajit, Mohapatra, Sushanta KumarJournal:
Silicon
DOI:
10.1007/s12633-020-00618-8
Date:
August, 2020
File:
PDF, 767 KB
2020