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Resistive switching characteristics and mechanism of bilayer HfO2/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memory
Ismail, Muhammad, Batool, Zahida, Mahmood, Khalid, Manzoor Rana, Anwar, Yang, Byung-Do, Kim, SungjunVolume:
18
Journal:
Results in Physics
DOI:
10.1016/j.rinp.2020.103275
Date:
September, 2020
File:
PDF, 2.08 MB
2020