Subthreshold Swing Saturation of Nanoscale MOSFETs Due to...

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IEEE Electron Device Letters 2020

Subthreshold Swing Saturation of Nanoscale MOSFETs Due to Source-to-Drain Tunneling at Cryogenic Temperatures

Kao, Kuo-Hsing, Wu, Tzung Rang, Chen, Hong-Lin, Lee, Wen-Jay, Chen, Nan-Yow, Ma, William Cheng-Yu, Su, Chun-Jung, Lee, Yao-Jen
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Year:
2020
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2020.3012033
File:
PDF, 512 KB
2020
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