Low-temperature re-oxidation of near-interface defects and...

Applied Surface Science 2020 / 11 Vol. 531

Low-temperature re-oxidation of near-interface defects and voltage stability in SiC MOS capacitors

Yin, Zhipeng, Yang, Chao, Zhang, Fanglong, Su, Yan, Qin, Fuwen, Wang, Dejun
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Volume:
531
Journal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2020.147312
Date:
November, 2020
File:
PDF, 1.63 MB
2020
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