Temperature-dependent resistive switching for gold/poly(methyl methacrylate)/heavily doped p-type Si/indium devices by incorporating black phosphorus into poly(methyl methacrylate)
Su, Ting-Hong, Chen, Ming-Yang, Huang, Wei-Shiuan, Lin, Yow-JonJournal:
Indian Journal of Physics
DOI:
10.1007/s12648-020-01818-z
Date:
August, 2020
File:
PDF, 1.08 MB
2020