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Etch selectivity during plasma-assisted etching of SiO 2 and SiN x : Transitioning from reactive ion etching to atomic layer etching
Gasvoda, Ryan J., Zhang, Zhonghao, Wang, Scott, Hudson, Eric A., Agarwal, SumitVolume:
38
Journal:
Journal of Vacuum Science & Technology A
DOI:
10.1116/6.0000395
Date:
September, 2020
File:
PDF, 5.79 MB
2020