Near-Interface Trap Model for the Low Temperature...

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IEEE Transactions on Electron Devices 2020

Near-Interface Trap Model for the Low Temperature Conductance Signal in SiC MOS Capacitors With Nitrided Gate Oxides

Nicholls, Jordan R., Vidarsson, Arnar M., Haasmann, Daniel, Sveinbjornsson, Einar O., Dimitrijev, Sima
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Year:
2020
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2020.3011661
File:
PDF, 1007 KB
2020
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