Ringing suppression of SiC MOSFET using a strongly coupled...

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Ringing suppression of SiC MOSFET using a strongly coupled external resonator through analogy with passive PT-symmetry

Yatsugi, Kenichi, Oishi, Koshi, Iizuka, Hideo
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Year:
2020
Journal:
IEEE Transactions on Power Electronics
DOI:
10.1109/TPEL.2020.3013399
File:
PDF, 1.25 MB
2020
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