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Effect of Phosphorus Doped Poly Annealing on Threshold Voltage Stability and Thermal Oxide Reliability in 4H-SiC MOSFET
Lee, Kwangwon, Seo, Young Ho, Lee, Taeseop, Park, Kyeong Seok, Domeij, Martin, Allerstam, Fredrik, Neyer, ThomasVolume:
1004
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.1004.554
Date:
July, 2020
File:
PDF, 474 KB
2020