Low-level gallium-aluminum-arsenide (GaAlAs) diode laser...

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Low-level gallium-aluminum-arsenide (GaAlAs) diode laser irradiation (λ 830 nm) associated with and without fluoridated gel in the prevention of enamel erosion

Seefeldt, Vanessa Borelli, Alvarenga, Marian Pereira, Soares, Luís Eduardo Silva
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Journal:
Lasers in Dental Science
DOI:
10.1007/s41547-020-00100-z
Date:
August, 2020
File:
PDF, 2.12 MB
2020
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