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[IEEE 2020 Device Research Conference (DRC) - Columbus, OH, USA (2020.6.21-2020.6.24)] 2020 Device Research Conference (DRC) - High-k LaB x N y gate insulator formed by the Ar/N 2 plasma sputtering of N-doped LaB 6 metal thin films and its application to floating-gate memory
Park, Kyung Eun, Ohmi, Shun-ichiroYear:
2020
DOI:
10.1109/drc50226.2020.9135143
File:
PDF, 2.33 MB
2020