Epitaxial ZnO layer growth on Si(111) substrate with...

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Crystal Growth & Design 2020 / 08

Epitaxial ZnO layer growth on Si(111) substrate with intermediate AlN nucleation layer by methane based chemical vapor deposition.

Müller, Raphael, Gelme, Okan, Scholz, Jan-Patrick, Huber, Florian, Mundszinger, Manuel, Li, Yueliang, Madel, Manfred, Minkow, Alexander, Kaiser, Ute, Herr, Ulrich, Thonke, Klaus
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Journal:
Crystal Growth & Design
DOI:
10.1021/acs.cgd.0c00907
Date:
August, 2020
File:
PDF, 34.38 MB
2020
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