1.48 MV·cm-1/0.2 mâ¦Â·cm2 GaN Quasi-Vertical Schottky Diode Via Oxygen Plasma Termination
Bian, Zhaoke, Zhang, Jincheng, Zhao, Shenglei, Zhang, Yachao, Duan, Xiaoling, Chen, Jiabo, Ning, Jing, Hao, YueYear:
2020
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2020.3017510
File:
PDF, 1.77 MB
2020