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Low Temperature and High Pressure Oxidized Al2O3 as Gate Dielectric for AlInN/GaN MIS-HEMTs
Kanaga, Srikanth, Dutta, Gourab, Kushwah, Bhuvnesh, Gupta, Nandita Das, Gupta, Amitava DasYear:
2020
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/TDMR.2020.3016394
File:
PDF, 1.94 MB
2020