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[IEEE 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Vienna, Austria (2020.9.13-2020.9.18)] 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - High Voltage Vertical GaN-on-GaN Schottky Barrier Diode with High Energy Fluorine Ion Implantation Based on Space Charge Induced Field Modulation (SCIFM) Effect
Yin, Ruiyuan, Li, Yue, Wen, Cheng P., Fu, Yunyi, Hao, Yilong, Wang, Maojun, Shen, BoYear:
2020
DOI:
10.1109/ISPSD46842.2020.9170190
File:
PDF, 1.30 MB
2020