Hf0.5Zr0.5O2 ferroelectric embedded dual-gate MoS2 field...

  • Main
  • 2020
  • Hf0.5Zr0.5O2 ferroelectric embedded dual-gate MoS2 field...
IEEE Electron Device Letters 2020

Hf0.5Zr0.5O2 ferroelectric embedded dual-gate MoS2 field effect transistors for memory merged logic applications

Huang, Kailiang, Zhai, Minglong, Liu, Xueyuan, Sun, Bing, Chang, Hudong, Liu, Jianhua, Feng, Chao, Liu, Honggang
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2020
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2020.3019681
File:
PDF, 1.07 MB
2020
Conversion to is in progress
Conversion to is failed