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[IEEE 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) - Genova, Italy (2019.9.3-2019.9.5)] 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) - GaN-Based Active Gate-Drive Unit for IGBTs in Medium-Voltage Applications
Beushausen, Steffen, Wienhausen, Arne Hendrik, de Doncker, Rik W.Year:
2019
DOI:
10.23919/EPE.2019.8914945
File:
PDF, 450 KB
2019