Analysis of MIS-HEMT Device Edge Behavior for GaN...

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IEEE Transactions on Electron Devices 2020

Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential Method

Kammeugne, R. Kom, Leroux, C., Cluzel, J., Vauche, L., Royer, C. Le, Gwoziecki, R., Biscarrat, J., Gaillard, F., Charles, M., Bano, E., Ghibaudo, G.
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Year:
2020
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2020.3015466
File:
PDF, 1.47 MB
2020
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