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[IEEE 2020 IEEE VLSI Device Circuit and System (VLSI DCS) - Kolkata, India (2020.7.18-2020.7.19)] 2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) - Analytical Drain Current Model for Super-Threshold Region of Double Gate Tunnel FET
Chowdhury, Joy, Sarkar, Angsuman, Mahapatra, Kamalakanta, Das, J. K.Year:
2020
DOI:
10.1109/VLSIDCS47293.2020.9179867
File:
PDF, 1.87 MB
2020