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[IEEE 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Vienna, Austria (2020.9.13-2020.9.18)] 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - 1.2kV/2.9mΩ.cm 2 Vertical NiO/β-Ga 2 O 3 Heterojunction Diodes with High Switching Performance
Hu, Yawei, Wang, Shanyong, Yang, Ziqi, Chen, Rongsheng, Lu, Xing, Ren, Yuan, Zhou, Xianda, Chen, Zimin, Pei, Yanli, Wang, GangYear:
2020
DOI:
10.1109/ISPSD46842.2020.9170114
File:
PDF, 1.29 MB
2020