Epitaxial high-yield intrinsic and Te-doped dilute nitride GaAsSbN nanowire heterostructure and ensemble photodetector application.
Pokharel, Rabin, Ramaswamy, Priyanka, Devkota, Shisir, Parakh, Mehul, Dawkins, Kendall, Penn, Aubrey N., Cabral, Matthew, Reynolds, Lewis, Iyer, ShanthiJournal:
ACS Applied Electronic Materials
DOI:
10.1021/acsaelm.0c00450
Date:
August, 2020
File:
PDF, 1.40 MB
2020
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